bd746, bd746a, bd746b, bd746c pnp silicon power transistors
1 august 1978 - revised september 2002 specifications are subject to change without notice. designed for complementary use with the bd745 series 115 w at 25c case temperature 20 a continuous collector current 25 a peak collector current customer-specified selections available absolute maximum ratings at 25c case temperature (unless otherwise noted) notes: 1. this value applies for t p 0.3 ms, duty cycle 10%. 2. derate linearly to 150c case temperature at the rate of 0.92 w/c. 3. derate linearly to 150c free air temperature at the rate of 28 mw/c. 4. this rating is based on the capability of the transistor to operate safely in a circuit of: l = 20 mh, i b(on) = -0.4 a, r be = 100 ? , v be(off) = 0, r s = 0.1 ? , v cc = -20 v. rating symbol value unit collector-base voltage (i e = 0) bd746 bd746a bd746b bd746c v cbo -50 -70 -90 -110 v collector-emitter voltage (i b = 0) bd746 bd746a bd746b bd746c v ceo -45 -60 -80 -100 v emitter-base voltage v ebo -5 v continuous collector current i c -20 a peak collector current (see note 1) i cm -25 a continuous base current i b -7 a continuous device dissipation at (or below) 25c case temperature (see note 2) p tot 115 w continuous device dissipation at (or below) 25c free air temperature (see note 3) p tot 3.5 w unclamped inductive load energy (see note 4) ?li c 2 90 mj operating free air temperat ure r ange t a -65 to +150 c operating junction temperature range t j -65 to +150 c storage temperature range t stg -65 to +150 c lead temperature 3.2 mm from case for 10 seconds t l 260 c sot-93 package (top view) pin 2 is in electrical contact with the mounting base. mdtraaa b c e 1 2 3
bd746, bd746a, bd746b, bd746c pnp silicon power transistors 2
august 1978 - revised september 2002 specifications are subject to change without notice. notes: 5. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2%. 6. these parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. ? voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25c case temperature (unless otherwise noted) parameter test conditions min typ max unit v (br)ceo collector-emitter breakdown voltage i c = -30 ma i b = 0 (see note 5) bd746 bd746a bd746b bd746c -45 -60 -80 -100 v i cbo collector cut-off current v ce = -50 v v ce = -70 v v ce = -90 v v ce = -110 v v ce = -50 v v ce = -70 v v ce = -90 v v ce = -110 v v be =0 v be =0 v be =0 v be =0 v be =0 v be =0 v be =0 v be =0 t c = 125c t c = 125c t c = 125c t c = 125c bd746 bd746a bd746b bd746c bd746 bd746a bd746b bd746c -0.1 -0.1 -0.1 -0.1 -5 -5 -5 -5 ma i ceo collector cut-off current v ce = -30 v v ce = -60 v i b =0 i b =0 bd746/746a bd746b/746c -0.1 -0.1 ma i ebo emitter cut-off current v eb = -5 v i c =0 -0.5 ma h fe forward current transfer ratio v ce = -4 v v ce = -4 v v ce = -4 v i c = -1a i c = -5a i c =-20a (see notes 5 and 6) 40 20 5 150 v ce(sat) collector-emitter saturation voltage i b = -0.5 a i b = -5 a i c = -5a i c = -20 a (see notes 5 and 6) -1 -3 v v be base-emitter voltage v ce = -4 v v ce = -4 v i c = -5 a i c =-20 a (see notes 5 and 6) -1 -3 v h fe small signal forward current transfer ratio v ce = -10 v i c = -1a f = 1 khz 25 | h fe | small signal forward current transfer ratio v ce = -10 v i c = -1a f = 1 mhz 5 thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 1.1 c/w r ja junction to free air thermal resistance 35.7 c/w resistive-load-switching characteristics at 25c case temperature parameter test conditions ? min typ max unit t d delay time i c = -5 a v be(off) = 4.2 v i b(on) = -0.5 a r l = 6 ? i b(off) = 0.5 a t p = 20 s, dc 2% 20 ns t r rise time 120 ns t s storage time 600 ns t f fall time 300 ns
bd746, bd746a, bd746b, bd746c pnp silicon power transistors 3
august 1978 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 1. figure 2. maximum safe operating regions figure 3. typical dc current gain vs collector current i c - collector current - a -01 -10 -10 -100 h fe - dc current gain 10 100 1000 tcs636ae t c = 125c t c = 25c t c = -55c v ce = -4 v t p = 300 s, duty cycle < 2% collector-emitter saturation voltage vs collector current i c - collector current - a -01 -10 -10 -100 v ce(sat) - collector-emitter saturation voltage - v -001 -01 -10 -10 tcs636af t c = -55c t c = 25c t c = 125c t p = 300s, duty cycle < 2% i c i b = 10 maximum forward-bias safe operating area v ce - collector-emitter voltage - v -10 -10 -100 -1000 i c - collector current - a -001 -01 -10 -10 -100 sas635ac bd746 bd746a bd746b bd746c t p = 1 ms, d = 0.1 = 10% t p = 10 ms, d = 0.1 = 10% t p = 50 ms, d = 0.1 = 10% dc operation
bd746, bd746a, bd746b, bd746c pnp silicon power transistors 4
august 1978 - revised september 2002 specifications are subject to change without notice. thermal information figure 4. maximum power dissipation vs case temperature t c - case temperature - c 0 25 50 75 100 125 150 p tot - maximum power dissipation - w 0 20 40 60 80 100 120 tis635ab
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